| PART |
Description |
Maker |
| AP2302AGN-HF |
Advanced Power MOSFE
|
TY Semiconductor Co., Ltd
|
| IRF460 IRF460NBSP IRF460PBF |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
HEXFET?TRANSISTORS 500V, N-CHANNEL
N-Channel Enhancement MOSFET
From old datasheet system
TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE)
|
IRF[International Rectifier]
|
| IRFP460P IRFP460PPBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)
|
IRF[International Rectifier]
|
| RFH10N50 RFH10N45 |
CAP 1000PF 200V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs
10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs 10 A, 450 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IRF840S IRF840STRR IRF840STRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| JANSR2N7402 FN4374 |
3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
3A, 500V, 2.70 Ohm, Rad Hard, Channel Power MOSFET
3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET
3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
| STP20NM505 STP20NM50FP STB20NM50 STB20NM50-1 STB20 |
N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
From old datasheet system
N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET
Search --To STSTP20NM50
N-CHANNEL POWER MOSFET
N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmeshPower MOSFET N沟道500V - 0.20ohm - 20A条TO-220/FP/D2PAK/I2PAK的MDmesh？功率MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| STB6NB50 STB6NB50-1 |
FUSE/SM .8W, VMAX = 6 VDC, I(TRIP) = 2.2 A 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 5.8AI（四）|62AA
N-CHANNEL Power MOSFET
N - CHANNEL 500V - 1.35ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET
N - CHANNEL 500V - 1.35 Ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET
|
STMicroelectronics N.V.
ST Microelectronics
SGS Thomson Microelectronics
|
| IRF820A IRF820APBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)
Power MOSFET(Vdss=500V/ Rds(on)max=3.0ohm/ Id=2.5A)
|
IRF[International Rectifier]
|
| IRF840AL IRF840AS IRF840ASTRR |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 8A条（丁）|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
